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IPM Electronics is the leading supplier of discrete, modular and integrated high power semiconductor solutions as igbt power modules. We can help your industry parts needs and turns ideas into cost-effective products.  We support many different niche markets, including transportation, AC and DC servo drives, AC and DC motor controls, igbt power modules, UPS, alternative energy, medical power supplies, welding, induction heating, electric vehicles, aircraft and appliances, etc.
Some of the markets, including:

  • AC, DC and Servo Drives (Low and Medium Voltage)

  • Aircraft (Electro-Hydrostatic Actuators, Energy Generators)

  • Alternative Energy (Wind, Photovoltaic) and Distributed Power (Flywheel, Fuel Cell, Micro-turbine)

  • Electric Vehicles

  • Induction Heating

  • Industrial Pump Controls

  • Medical Power Supplies (CT, MRI, X-Ray)

  • Power Generation and Distribution

  • Pulsed Energy

  • Transportation (Propulsion and Auxiliary Power for Rail, Shipboard)

  • Uninterruptible Power Supplies (UPS)

  • Welding

  • White Goods and HVAC

  • Motor Drives

  • Photovoltaic (PV) Inverters

  • Power Supplies

  • Servo Drives

  • Traction Inverters

  • UPS

Big Stock thousands of parts ready to ship

Some of the products we daily carry in our inventory are:

Igbt power module, drive modules, inverters, laser diodes, transistors, bridge rectifiers, diodes, thyristors, phase rectifiers, circuits, voltage rectifiers, phase bridge, mosfet, fast recovery diodes, SKKT,SKKH,SKKL, SCR, from brands like Mitsubishi, Fuji, Eupec, Ixys, Infineon, Sanrex, Toshiba, Sanken, Semikron, Siemens, Hitachi, Abb, Ixgn, Samsung, Fairchild, Ir, Nihon Inter Electronics, Danfoss, Powerex, Nell, Catelec, Santry, Powersem, Motorola, etc. Intelligent Power Modules (IPMs) are advanced hybrid power devices that combine high speed, low loss IGBTs with optimized gate drive and protection circuitry.

IGBTS POWER MODULES

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ELECTRONIC BOARDS SIEMENS ABB

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INTEGRATED CIRCUITS
AND  TRASISTORS

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        FUSES

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Definition of the IGBT Power Module

 

The insulated gate bipolar transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers. Since it is designed to rapidly turn on and off, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters.

The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is used in medium- to high-power applications such as switched-mode power supply, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V.

The IGBT is a fairly recent invention. The first-generation devices of the 1980s and early 1990s were relatively slow in switching, and prone to failure through such modes as latchup and secondary breakdown. Second-generation devices were much improved, and the current third-generation ones are even better, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads.[1]

 

IGBT Power Module Structure

An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cross section of a typical IGBT showing internal connection of MOSFET and Bipolar Device

This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. By injecting majority carriers (holes) from the collector p+ region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced. However, this resultant reduction in on-state forward voltage comes with several penalties:

  • The additional PN junction blocks reverse current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the reverse direction. In bridge circuits where reverse current flow is needed an additional diode (called a freewheeling diode) is placed in parallel with the IGBT to conduct current in the opposite direction. The penalty isn't as severe as first assumed though, because at the higher voltages where IGBT usage dominates, discrete diodes are of significantly higher performance than the body diode of a MOSFET.

  • The reverse bias rating of the N- drift region to collector P+ diode is usually only of 10's of volts, so if the circuit application applies a reverse voltage to the IGBT, an additional series diode must be used.

  • The minority carriers injected into the n- drift region take time to enter and exit or recombine at turn on and turn off. This results in longer switching time and hence higher switching loss compared to a power MOSFET.

  • The additional PN junction adds a diode-like voltage drop to the device. At lower blocking voltage ratings, this additional drop means that an IGBT would have a higher on-state voltage drop. As the voltage rating of the device increases, the advantage of the reduced N- drift region resistance overcomes the penalty of this diode drop and the overall on-state voltage drop is lower (the crossover is around 400 V blocking rating). Thus IGBTs are rarely used where the blocking voltage requirement is below 600 V.

Information from Wikipedia, the free encyclopedia withText is available under the Creative Commons Attribution-ShareAlike License;

 

 

 

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Copyright 2016 www.ipmelectronics.com